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Single crystal ReS? (Rhenium disulfide) crystals are developed at our facilities...

14 years of growth optimization in chemical vapor transport (CVT) as well as flu...

Hafnium disulfide (HfS?) is an indirect gap layered semiconductor in the bulk an...

Large size hexagonal phase GaTe (Gallium telluride) crystals have been developed...

More than a decade of growth optimization in chemical vapor transport (CVT) as w...

Our single crystal GeS (Germanium sulfide) crystals come with guaranteed optical...

The only commercially available TlGaS2 vdW crystals have been synthesized at our...

The only commercially available TlInS2 vdW crystals have been synthesized at our...

Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials. Our cry...

Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2...

Single crystal 1Tphase TaS? (Tantalum disulfide) crystals come with guaranteed c...

Our single crystal SnS (Tin sulfide) crystals come with guaranteed optical, elec...

Magnetic semiconductor FePS3 has a monoclinic structure with the factor group C2...

Antimony sulfide is the chemical compound with the formula Sb2S3 which crystalli...

Synthetic single crystal Tin lead disulfide (PbSnS?) is a special member of laye...

Single crystal highly oriented synthetic 2H-phase MoS2 crystals have been develo...

Environmentally stable 2H-TaS2 crystals have been synthesized at our facilities ...

Our single crystal SnS2 (Tin disulfide) crystals come with guaranteed electronic...

晶體尺寸：10平方毫米晶體種類：半導體 晶體純度：99.999 %表征方法：EDS，SEM，Raman其他更多定制尺寸請聯系在線客服

晶體尺寸：25平方毫米晶體種類：半導體 晶體純度：99.999 %表征方法：EDS，SEM，Raman其他更多定制尺寸請聯系在線客服