三级片视频播放,精品三级片在线观看,A级性爱视频,欧美+日韩+国产+无码+小说,亲子伦XX XX熟女,秋霞最新午夜伦伦A片黑狐,韩国理伦片漂亮的保拇,一边吃奶一边做边爱完整版,欧美放荡性护士videos

泰州巨納新能源有限公司
中級會員 | 第4年

13651969369

當前位置:泰州巨納新能源有限公司>>二維材料>>其他二維材料>> 2D SemiconductorsTiS3 nanosheets 三硫化鈦納米片

TiS3 nanosheets 三硫化鈦納米片

參   考   價: 7030.4

訂  貨  量: ≥20 片

具體成交價以合同協議為準

產品型號2D Semiconductors

品       牌BINKS/美國

廠商性質生產商

所  在  地泰州市

更新時間:2024-06-02 16:24:17瀏覽次數:1293次

聯系我時,請告知來自 化工儀器網
同類優質產品更多>
供貨周期 現貨 規格 2D Semiconductors
貨號 003 應用領域 環保,能源
主要用途 TiS3 nanosheets are different from our T Crystal size ~ 1 cm
TiS3 nanosheets are different from our TiS3 crystals in that TiS3 nanosheets have been directly grown onto Ti thin foils using vapor liquid solid (VLS) growth technique. As shown in our product photos

 

Advantages of TiS3 nanoribbons over TiS3 crystals

Similar to TiS3, Ti/TiS3 nanosheets stacks can be mechanically exfoliated onto variety substrates
VLS grown TiS3 are already really thin (~10) this mechanical exfoliation enables you to achieve monolayers much easily compared to bulk TiS3
It is ideal for high update (battery, gas sensing / storage) applications
TiS3 is a layered material like MoS2 and other layered systems. However, the crystal displays strong crystalline anisotropy which results in direction dependent properties like thermal conductivity, electronic mobility, and excitonic binding energies. Recent studies have proposed TiS3 as high carrier mobility 2D transistors [1], new IR material [1], as well as polarized emission material [2,3]. In a typical order, a large number of layered needle like sheets are contained in a capsule sealed under Argon environment.

Crystals have been characterized by TEM, XPS, SIMS, Raman, and XRD and possess perfect 1:3 stoichiometry and defect density less than 1 defects / 10,000 unit cells.

Crystal size ~ 1 cm

Material characteristics

High carrier mobility semiconductor
2D anisotropic semiconductor
2D Catalytic material
Related literature

[1] "Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct-Gap Semiconductor with High and Anisotropic Carrier Mobility"; Angew Chem Int Ed Engl. 2015 Jun 22;54(26):7572-6

[2] Unusual lattice vibration characteristics in whiskers of the pseudo-one-dimensional titanium trisulfide TiS3; Nature Communications volume 7, Article number: 12952 (2016) doi:10.1038/ncomms12952 [Link]

[3] Titanium trisulfide (TiS3): a 2D semiconductor with quasi-1D optical and electronic properties; Scientific Reports volume 6, Article number: 22214 (2016)

[4] Angle resolved vibrational properties of anisotropic transition metal trichalcogenide nanosheets; Nanoscale, 2017,9, 4175-4182

 

Publications from this product

H. Yi et. al. The band structure of the quasi-one-dimensional layered semiconductor TiS3(001) Appl. Phys. Lett. 112, 052102 (2018)

 

 

會員登錄

×

請輸入賬號

請輸入密碼

=

請輸驗證碼

收藏該商鋪

X
該信息已收藏!
標簽:
保存成功

(空格分隔,最多3個,單個標簽最多10個字符)

常用:

提示

X
您的留言已提交成功!我們將在第一時間回復您~
撥打電話
在線留言
主站蜘蛛池模板: 建平县| 鹤庆县| 陵川县| 融水| 甘肃省| 环江| 视频| 南溪县| 垦利县| 宾川县| 出国| 武功县| 庐江县| 阿城市| 大足县| 徐州市| 龙山县| 紫金县| 台东县| 名山县| 桐乡市| 夏津县| 柘荣县| 皋兰县| 百色市| 哈密市| 章丘市| 嵊泗县| 温州市| 通州区| 仁寿县| 台东市| 灯塔市| 汶上县| 东乌| 闽侯县| 恩施市| 枞阳县| 霍城县| 定南县| 濮阳县|