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當前位置：泰州巨納新能源有限公司>>二維材料>>碲化物晶體>> ZrGeTe4
| 供貨周期 | 現貨 | 應用領域 | 環保,化工,能源,綜合 |
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ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
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