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當(dāng)前位置:泰州巨納新能源有限公司>>二維材料>>二維材料薄膜>> 機(jī)械剝離單層二硫化鉬薄膜

機(jī)械剝離單層二硫化鉬薄膜

參   考   價(jià): 6371.3

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品       牌2D Semiconductors

廠商性質(zhì)生產(chǎn)商

所  在  地泰州市

更新時(shí)間:2024-06-03 18:47:42瀏覽次數(shù):900次

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Monolayer molybdenum disulfide (1H-MoS?) flakes have been exfoliated from bulk molybdenum disulfide (2H-MoS?) onto 90nm thermal oxide and measures from 5 micron up to 40 micron in size.

Monolayer molybdenum disulfide (1H-MoS?) flakes have been exfoliated from bulk molybdenum disulfide (2H-MoS?) onto 90nm thermal oxide and measures from 5 micron up to 40 micron in size. Each sample contains at least one single-layer MoS? and is easy to find with the given x and y coordinates. Optical images and preliminary tests come with the product. Typically, single-layer MoS? show strong PL at 1.85-1.88 eV with 0.04 to 0.1eV FWHM, and the Raman peaks are located at 386cm-1 (E2g in-plane mode) and 404 cm-1 (A1g out-of-plane mode). Characterization Raman spectroscopy: Raman spectroscopy is data is taken on every single-layer flakes. Typically, flakes show two prominent Raman peaks at 386cm-1 (E2g- in plane-) and 404cm-1 (A1g out-of-plane) and the FWHM (full-width-at-half-maximum) is less than 5cm-1. Photoluminescence (PL): In the single layer form, molybdenum disulfide possesses direct band-gap at 1.85eV (670nm). PL measurements show strong PL peak located at 1.85eV (670nm) with 0.04-0.10 eV PL FWHM. Optical Microscope images: Each sample is inspected under the optical microscope and x-y coordinates are recorded. Contact us for more information

Possible applications:
Electronics
Sensors - detectors
Optics
STM – AFM applications
Molecular detection – binding
Ultra-low friction studies
Materials science and semiconductor research


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